yamashita publication

Publication list (Dr. Yoshiyuki Yamashita)

[59]"Transient diffusion and cluster formation of water molecules on Rh(111) at 20 K"
Atsushi Beniya, Kozo, Mukai, Yoshiyuki Yamashita, and Jun Yoshinobu, submitted to J. Chem. Phys.

[58] "Soft X-ray absorption and emission study of the SiO2/Si(100) Interface"
Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, and S. Shin,
submitted to Surf. Sci.

[57] "Fabrication and Analysis of Buried Iron Silicide Microstructures Using a Focused Low Energy Electron Beam"
Y. Kakefuda, Y. Yamashita, K. Mukai, and J. Yoshinobu, submitted to Surf. Sci.

[56] "Regioselective cycloaddition reaction of alkene molecules to the asymmetric dimer on Si(100)c(4x2)"
Kazuhiro Oguchi, Masashi Nagao, Hirobumi Umeyama, Tetsuo Katayama, Yoshiyuki Yamashita, Kozo Mukai, Jun Yoshinobu, Kazuto Akagi and Shinji Tsuneyuki, J. Am. Chem. Soc., in press

[55] "The First Layer of Water on Rh(111): Microscopic Structure and Desorption Kinetics"
Atsushi Beniya, Susumu Yamamoto, Kozo, Mukai, Yoshiyuki Yamashita, and Jun Yoshinobu, J. Chem. Phys.125 (2006)054717

[54] "Methods of observation and elimination of semiconductor defect states"
Hikaru Kobayashi, Yueh-Ling Liu, Yoshiyuki Yamashita, Jan Ivan?o, Shigeki Imai and Masao Takahashi, SOLAR ENERGY 80 (2006) 645.

[53] "Adsorption states of NO on the Pt(111) step surface"
N. Tsukahara, K. Mukai, Y. Yamashita, J.Yoshinobu, and H. Aizawa, Surf. Sci, 600 (2006) 3477.

[52] "A compact UHV system for fabrication and in situ analysis of artificial microstructure"
Y. Kakefuda, Y. Yamashita, K. Mukai, and J. Yoshinobu, Review of Scientific Instruments, 77 (2006) 053702 (5 pages)

[51] "Direct observation of the site-specific valence electronic structure at SiO2/Si interface"
Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, T. Takeuchi, Y. Takata, S. Shin, K. Akagi, and S. Tsuneyuki,
e-Journal of Surface Science and Nanotechnology, 4 (2006) 280-284.

[50] "Soft x-ray absorption and emission study on the silicon oxynitride/Si(100) interface"
Y. Yamashita, K. Oguchi, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, S. Shin, N. Tamura, H. Nohira and T. Hattori, Jpn. J. Appl. Phys., 46 (2007) L77.

[49] "A Method of Observation of Low Density Interface States
by Means of X-ray Photoelectron Spectroscopy under Bias and Passivation by Cyanide Ions"
H. Kobayashi, T. Sakurai, Y. Yamashita, T. Kubota, O. Maida, and M. Takahashi, Appl. Surf. Sci., 252 (2006) 7700(invited review)

[48] "Search for adsorption potential energy minima of NO on Pt(997)"
N. Tsukahara, Y. Yamashita, K. Mukai, and J. Yoshinobu, Surf. Sci. 600 (2006) 3560-3563.

[47] "CYCLOADDITION REACTION BETWEEN ORGANIC MOLECULES AND Si(100) AND ELECTRONIC PROPERTIES OF ADSORBED MOLECULES "
J. YOSHINOBU, H. UMEYAMA, M. NAGAO, K. OGUCHI, K. MUKAI and Y. YAMASHITA, International Journal of Nanoscience, in press

[46] "Effects of interface roughness on the local valence electronic structure at SiO2/Si interface: Soft X-ray absorption and emission study "
Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, Y. Takata, and S. Shin, Journal de Physique IV, 132 (2006) 259-262

[45] "Direct Observation of Site-specific Valence Electronic Structure at Interface: SiO2/Si Interface"
Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, T. Takeuchi, Y. Takata, S. Shin, K. Akagi, and S. Tsuneyuki, Phys. Rev. B 73 (2006) 045336.
Selected by Virt. J. Nano. Sci. & Tech., 13(6) 2006

[44] "Water adsorption on Rh(111) at 20 K: from monomer to bulk amorphous ice"
Susumu Yamamoto, Atsushi Beniya, Kozo Mukai, Yoshiyuki Yamashita,and Jun Yoshinobu, J. Phys. Chem. B 109 (2005) 5816-5823.

[43] "Precursor mediated cycloaddition reaction of ethylene to the Si(100)c(4x2) surface"
Masashi Nagao, Hirobumi Umeyama, Kozo Mukai, Yoshiyuki Yamashita, Jun Yoshinobu, K.Akai and S. Tsuneyuki,J. Am. Chem. Soc.(comm.) 126 (2004) 9922-9923

[42]"Determination of interface states in the semiconductor band-gap by XPS measurements under biases"
Hikaru Kobayashi, Akira. Asano, Y. Yamashita, Tomohiro Kubota, and Yasushiro Nishioka,submitted to Phys. Rev. B

[41] "Adsorption of water molecules and ice formation on Rh(111)"
S. Yamamoto, K. Mukai, Y. Yamashita, and J. Yoshinobu, submitted to Surf. Sci.

[40] "Ground state of the Si(001)surface revisited: Is seeing believing ?"
T.Uda, H.Shigekawa, Y.Sugawara, S.Mizuno, H.Tochihara, Y.Yamashita, J.Yoshinobu, K.Nakatsuji, H.Kawai and F.Komori, Prog. Sur. Sci. (invited review paper), 76 (2004) 147-162

[39] "Highly selective surface Lewis acid-base reaction: trimethylamine on Si(100)c(4x2)"
M.Z. Hossain, S. Machida, M. Nagao, Y. Yamashita, K. Mukai, and J. Yoshinobu, J. Phys. Chem. B 108 (2004) 4737-4742.

[38] "Structural and chemical property of unsaturated cyclic-hydrocarbon molecules regularly chemisorbed on Si(001) surface"
K. Akagi, S. Tsuneyuki, Y. Yamashita, K. Hamaguchi, and J. Yoshinobu, Appl. Surf. Sci. 134 (2004) 162-167.

[37] "The Precursor Mediated Chemisorption of Vinyl Bromide on Si(100)c(4x2)"
M. Nagao, K. Mukai, Y. Yamashita, and J. Yoshinobu, J. Phys. Chem. B, 108 <2004> 5703 - 5708

[36] "Switching the adsorption linkage of a bifunctional molecule to the Si(100) surface: from a dative SiN bond to a covalent SiC bond"
M.Z. Hossain, Y. Yamashita, K. Mukai, and J. Yoshinobu, Chem. Phys. Lett. 388 (2004) 27-30

[35] "Residual gas effects on high-resolution Si 2p spectra of Si(100)c(4x2)"
Y. Yamashita, S. Machida, K. Mukai, and J. Yoshinobu, Surf. Sci., 566-568 (2004) 467-470

[34] "Low Energy Electron Stimulated Chemical Reactions of CO in Water Ice"
S. Yamamoto, K. Mukai, Y. Yamashita, and J. Yoshinobu, Chem. Phys. Lett., 388 <2004> 27-30.

[33] "Microscopic observation of precursor-mediated adsorption process of NH3"
Zakir Hossain, Yoshiyuki Yamashita, Kozo Mukai, and Jun Yoshinobu, Phys. Rev. B, 68 (2003) 235322.

[32] "Purely site-specific chemisorption and conformation of trimethylamine on Si(100)c(4x2)"
M.Z. Hossain, S. Machida, Y. Yamashita, Kozo Mukai, and Jun Yoshinobu, J. Am. Chem. Soc., 125 (2003) 9252-9253

[31] "Lateral displacement by transient mobility in chemisorption of CO on Pt(997)"
J. Yoshinobu, N. Tsukahara, F. Yasui, K. Mukai, and Y. Yamashita, Phys. Rev. Lett. 90 (2003) 248301

[30] "Microscopic Adsorption Process of CO on Si(100)c(4x2) by means of Low Temperature Scanning Tunneling Microscopy"
Y. Yamashita, M.Z. Hossain, K. Mukai, and J. Yoshinobu, Phys. Rev. B, 68 (2003) 033314

[29] "A new model for C-defect on Si(100)"
Zakir Hossain, Yoshiyuki Yamashita, Kozo Mukai, and Jun Yoshinobu, Phys. Rev. B, 67 (2003) 153307

[28] "Adsorbed states of 1,1,1-trifluoro-2-propanol on Si(100)"
Masashi Nagao, Shin-ichi Nagaoka, Shin-ichiro Tanaka, Kozo Mukai, Yoshiyuki Yamashita, Jun Yoshinobu, Surf. Sci. 529 (2003) 288-294

[27] "Vibrational structure in C1s photoelectron spectra of ethylene on the Si(100)(2x1) surface"
Yoshiyuki Yamashita, S. Machida, M. Nagao, S. Yamamoto, K. Mukai and J. Yoshinobu, Chem. Phys. Lett., 374 (2003) 476

[26] "Intermolecular interaction and arrangements of adsorbed 1,4-cyclohexadiene molecules on Si(100)(2x1)"
Kanae Hamaguchi, Kozo Mukai, Yoshiyuki Yamashita, Jun Yoshinobu, Tomoshige Sato and Masashi Iwatsuki, Surf. Sci. 531(2003) 199-207

[25] "Electronic states and chemical reactivity of Si(100)c(4x2) surface at low temperature studied by high resolution Si 2p core level photoelectron spectroscopy"
Shin-ichi Machida,Yoshiyuki Yamashita, Masashi Nagao, Susumu Yamamoto, Youhei Kakefuda, Kozo Mukai, and Jun Yoshinobu, Surf. Sci., 532-535 (2003) 716-720

[24] "Direct Evidence for Asymmetric Dimer on Si(100) at Low Temperature by means of High Resolution Si 2p Photoelectron Spectroscopy"
Yoshiyuki Yamashita, Shin-ichi Machida, Masashi Nagao, Susumu Yamamoto, Youhei Kakefuda, Kozo Mukai, and Jun Yoshinobu, Jpn. J. Appl. Phys. 41(2002) L272-L274

[23] "Electronic and vibrational states of cyclopentene on Si(100)(2x1)"
Shinichi Machida, Kanae Hamaguchi, Masashi Nagao, Fumiko Yasui, Kozo Mukai, Yoshiyuki Yamashita, Jun Yoshinobu, Hiroyuki Kato, Hiroshi Okuyama, and Maki Kawai, J. Phys. Chem. B 106 (2002) 1691-1696

[22] "Nature of interface bonding of ethylene and benzene with Si(100)c(4x2) by means of angle-dependent Si 2p high resolution photoelectron spectroscopy"
Nagao Masashi, Yamashita Yoshiyuki, Machida Shinichi, Hamaguchi Kanae, Yasui,Fumiko, Mukai Kozo, Yoshinobu Jun, Surf. Sci. 513 (2002) 413-421

[21] "Chemical Nature of Nanostructures of La0.6Sr0.4MnO3 on SrTiO3(100)"
Y. Yamashita, K. Mukai, and J. Yoshinobu, T. Kinoshita, M. Lippmaa, and M. Kawasaki, Surf. Sci. 514 (2002) 54-59.

[20]"High resolution Si2p photoelectron spectroscopy of unsaturated hydrocarbon molecules adsorbed on Si(100)c(4x2): The interface bonding and charge transfer between the molecule and Si substrate"
Y. Yamashita, M. Nagao, S. Machida, K. Hamaguchi, F. Yasui, K. Mukai and J. Yoshinobu, J. Electron Spec. Relat. Phenom., 114-116 (2001) 389-393.

[19]"Reaction mechanism and adsorbed states of cyclohexene on Si(100)(2x1)"
J. Yoshinobu, Y. YAMASHITA, F. YASUI, K. MUKAI, K. AKAGI, S. TSUNEYUKI, K. HAMAGUCHI, S. MACHIDA, M. NAGAO,T. SATO, and M. IWATSUKI, submitted to J. Electron Spec. Relat. Phenom., 114-116 (2001) 383-387

[18]"Bonding and Structure of 1,4-cyclohexadiene Chemisorbed on Si(100)(2x1)"
Kanae Hamaguchi, Shinichi Machida, Masashi Nagao, Fumiko Yasui, Kozo Mukai, Yoshiyuki Yamashita, and Jun Yoshinobu, Hiroyuki Kato, Hiroshi Okuyama, Maki Kawai, Tomoshige Sato, Masashi Iwatsuki, J. Phys. Chem., 105 (2001) 3718 -3723

[17] "Adsorbed states of cyclopentene, cyclohexene and 1,4-cyclohexadiene on Si(100)(2x1): towords the fablication of novel organic films/Si hybrid structures"
Y. Yamashita, K. Hamaguchi, S. Machida, K. Mukai, J. Yoshinobu, S. Tanaka, and M. Kamada, Appl. Surf. Sci., 169-170 (2001) 172-175.

[16]"The first step reaction towards fabrication of novel hybrid structure between silicon surface and organic molecules: Adsorption of 1,4-cyclohexadiene on Si(100)(2x1)"
K. Hamaguchi, S. Machida, K. Mukai, Y. Yamashita, and J. Yoshinobu, Phys. Rev. B62 (2000) 7576-7580

[15]"Dependence of interface states in the Si band-gap on the oxide atomic density and interfacial roughness"
Yoshiyuki Yamashita, Akira Asano, Yasushiro Nishioka, and Hikaru Kobayashi,Phys. Rev. B59 (1999) 15872-15881

[14]"ULTRATHIN MOS GATE OXIDE INSULATORS: SURFACE PREPARATION, GROWTH, AND IN TERFACE CONTROL"
Yasusiro Nishioka, Tadahiro Komeda, Kenji Namba, Mieko Matsumura, Tomoyuki Sakoda, Tomohiro Kubota, Y. Yamashita, and H. Kobayashi,Proceeding of the Fourth International Symposium on Silicon Nitride andSilicon Dioxide Thin Insulating Films, edited by M. J. Deen, W. D. Brown,K. B. Sundaram, and S. I. Raider, 347-363

[13]"Studies on interface states at ultrathin SiO2/Si(100) interfaces by means of x-ray photoelectron spectroscopy under biases and their passivation by the cyanide treatment"
H. Kobayashi, A. Asano, S. Asada, Y. Yamashita, K. Yoneda, and Y. Todokoro, J. Appl. Phys. 83, 2098-2103 (1998)

[12]"New method for observation of interface states in the semiconductor band-gap: XPS measurements under biases"
Hikaru Kobayashi, Yoshiyuki Yamashita, and Yoshihiro Nakato, Sci. Rep. RITU A44, 201-206 (1997)

[11]"Effects of interface roughness on the density of interface states at ultrathin oxide/Si interfaces: XPS measurements under biases"
Y. Yamashita, Y. Nakato, H.Kato, Y. Nishioka, and H. Kobayashi, Appl. Surf. Sci. 117/118, 176-180 (1997)

[10] new method for the growth of silicon oxide layer below 300｡・by use of catalytic activity of platinum overlayers.
H. Kobayashi, Y. Yamashita, K. Namba, and Y. Todokoro, Appl. Surf. Sci. 108, 433-438 (1997)

[9]"Interface states at ultrathin oxide/Si(111) interfaces obtained from X-ray photoelectron spectroscopy measurements under biases"
H. Kobayashi, Y. Yamashita, Y. Nakato, T. Komeda, and Y. Nishioka, Appl. Phys. Lett. 69, 2276-2278 (1996)

[8]"Interface states for MOS devices with an ultrathin oxide layer"
Hikaru Kobayashi, Yoshiyuki Yamashita, Tomohiro Kubota, Yoshihiro Nakato, and Yasushiro Nishioka, The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, edited by H. Z. Massound, E. H. Poindexter, and C. R. Helms, 497-508 (1996)

[7]"Interface state-induced shift of the oxide and semiconductor core levels for metal-oxide-semiconductor devices"
H. Kobayashi, K. Namba, Y. Yamashita Y. Nakato, T. Komeda, and Y. Nishioka, J. Appl. Phys. 80, 1578-1582 (1996)

[6]"Interface states in the Si band-gap obtained from XPS measurements under biases"
H. Kobayashi, K. Namba, Y. Yamashita, Y. Nakato, and Y. Nishioka, Surf. Sci. 357-358, 455-458 (1996)

[5]"Spectroscopic observation of interface states of ultrathin silicon oxide"
Y. Yamashita, K. Namba, Y. Nakato, Y. Nishioka, and H. Kobayashi, J. Appl. Phys. 79, 7051-7057 (1996)

[4]"Interface states for Si-Based MOS Devices with an Ultrathin Oxide Layer : X-Ray Photoelectron Spectroscopic Measurements under Biases."
Hikaru KOBAYASHI, Yoshiyuki YAMASHITA, Toshio MORI, Yoshihiro NAKATO,Tadahiro KOMEDA, and Yasushiro NISHIOKA , Jpn. J. Appl. Phys. 34, 959-964 (1995)

[3]"Energy distribution of surface states in the Si band-gap for MOS diodes obtained from XPS measurements under biases."
H. Kobayashi, Y. Yamashita, T. Mori, Y. Nakato, K. H. Park, and Y. Nishioka, Surf. Sci. 326, 124-132 (1995)

[2]"New direct spectroscopic method for determination of the energy distribution of interface states."
H. Kobayashi, Y. Yamashita, Y. Nakato, M. Koshizuka, and Y. Nishioka, Proceeding of IEEE First World Conference on Photovoltaic Energy Conversion, 1644-1647 (1994)

[1]"Direct spectroscopic evidence of bias-induced shifts of semiconductor band edges for metal-insulator-semiconductor diodes.
"Hikaru KOBAYASHI, Yoshiyuki YAMASHITA, Kenji NAMBA, and Yoshihiro NAKATO, Jpn. J. Appl. Phys. 33, L754-L756 (1994)

Proceedings

[7] "Chemical Nature of Wire Struture of Perovskite Transition Metal Oxide on SrTiO3(100)"
Y. Yamashita, K. Mukai, and J. Yoshinobu, M. Lippmaa, and M. Kawasaki, Proceeding of the Fifth Symposium on Atomic-scacle Surface and Interface Dynamics. (2003) 375-380.

[6] "Electronic States and Growth Dynamics of La0.6Sr0.4MnO3 on SrTiO3(100)"
Y. Yamashita, K. Mukai, and J. Yoshinobu, T. Kinoshita, M. Lippmaa, and M. Kawasaki, Proceeding of the Fourth Symposium on Atomic-scacle Surface and Interface Dynamics. (2002) 407-410.

[5] "Atomically Controlled Insulator on Si Surfaces"
Y. Yamashita and J. Yoshinobu, Proceeding of the Third Symposium on Atomic-scacle Surface and Interface Dynamics. (1999) 407-410.

[4] "Interface States at Ultrathin Chemical Oxide/Silicon Interfaces Obtained from Measurements of XPS Spectra under Biases"
H. Kobayashi, Y. Yamashita, A. Asano, Y. Nakato, and Y. Nishioka, Proceeding of Solid State Devices and Materials. (1997) 94-97.

[3] "Interface States for Ultrathin Chemical Oxide Layers on Si(100) and Si(111)"
Y. Yamashita, Y. Nakato, Y. Nishioka, H. Kato, and H. Kobayashi, Proceeding of Solid State Devices and Materials. (1996) 619-622.

[2] "Interface States at Ultrathin Chemical Oxide/Silicon Interfaces Obtained from Measurements of XPS Spectra under Biases"
H. Kobayashi, Y. Yamashita, K. Namba, Y. Nakato, and Y. Nishioka, Proceeding of Solid State Devices and Materials. (1995) 19-22.

[1] "New Spectroscopic Method for Determination of Energy Distribution of Interface States for MOS Devices with Ultra-Thin Oxide Layers"
H. Kobayashi, Y. Yamashita, T. Mori, Y. Nakato, K. H. Park, and Y. Nishioka, Proceeding of Solid State Devices and Materials. (1994) 838-841.

Reviews

[6]"軟X線吸収発光分光法によるSiO2/Si界面価電子状態のサイト選択的観測"
山下良之, 山本　達, 向井孝三, 吉信　淳, 原田慈久, 徳島　高、高田恭孝, 辛埴, 赤木和人, 常行真司, 表面科学 26 (2005) 514-517.

[5]"Si(100)表面へのエチレンの環化付加反応における前駆状態の直接観測"
梅山裕史, 長尾昌志, 向井孝三, 山下良之, 吉信淳, 表面科学 26 (2005) 474-479.

[4]"高分解能内殻光電子分光法で観測される吸着分子の振動準位"
山下良之, 吉信淳, 表面科学 24 (2003) 301.

[3]"高分解能内殻光電子分光法で観たSi(100)(2x1)表面と有機分子との結合"
山下良之, PF News, 19 (2002) 31.

[2]"エッセンシャル化学事典（東京化学同人）"
山下良之（分担執筆）,

[1]"原子レベルで制御された<機能性有機分子/シリコン>ハイブリッド構造の創成と物性探索"
山下良之, 向井孝三, 赤木和人, 常行真司, 吉信　淳, 電子情報通信学会, 信学技報, 100 (2000) 69.

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